View NE5550979A-T1A-A_8069326.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

11 fo 1 egap 00.3.ver 0030je1300sd90r mar 12, 2013 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find wha t: " field. teehs atad ne5550979a silicon power ldmos fet fe at ur es ? high output power : p out = 39.5 d bm typ. (v ds = 7 .5 v, i dset = 20 0 ma, f = 460 mhz , p in = 25 d bm) ? high power added efficiency : add = 66% typ. (v ds = 7.5 v, i dset = 200 ma, f = 460 mhz, p in = 25 dbm) ? hig h lin ear gain : g l = 22 d b typ. (v ds = 7.5 v, i dset = 200 ma, f = 460 mh z, p in = 10 dbm) ? high esd tole ranc e : es d toleranc e > 8 kv (iec6 10 00-4- 2, cont act d isc ha rge) ? suitable for vhf to uhf-band class-ab power amplifier. applications ? 15 0 mh z band radio system ? 46 0 mh z band radio system ? 90 0 mh z band radio system ordering information part number order number p ac kage mark ing supplying form ne55 509 79 a ne55 509 79a -a 79a (pb f ree) w6 ? 12 mm wi de emboss ed tapi ng ? gate pin faces the perforati on side of the tape ne55 509 79a -t1 ne55 509 79a -t 1-a ? 12 mm wi de emboss ed tapi ng ? gate pin faces the perforati on side of the tape ? qty 1 kpcs/reel ne55 509 79 a-t1a ne55 509 79 a-t1a-a ? 12 mm wi de emboss ed tapi ng ? gate pin faces the perforati on side of the tape ? qty 5 kpcs/reel rem ark to order eval uation sa mp les, plea se contac t yo ur ne ar by sa les office. part numbe r for sample order: ne555 09 79 a-a absolute maximum ratings (t a = 25 c, unless otherwise specified) op eratio n in ex cess of any one of th ese parameters may resu lt in permanent damage. parameter symbol ratings unit drain to so ur ce volta ge v ds 30 v gate to source voltage v gs 6.0 v i tnerruc niard ds 3.0 a tot al power di ssipa tion note p tot 25 w cha nnel tem pe rature t ch 150 c storage te mperature t stg ? 55 to + 150 c note: value at t c = 25 c cau ti on observe precautions when handling because these devices are sensitive to electrostatic discharge. r09ds0031ej0300 rev.3.00 mar 12, 2013 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550979a r09ds0031ej0300 rev.3.00 page 2 of 11 mar 12, 2013 recommended operating range (t a = 25 c) parameter symbol test conditions min. typ. max. unit drain to source voltage v ds ? 7.5 9.0 v gate to source voltage v gs 1.65 2.20 2.85 v drain current i ds ? 1.7 ? a input power p in f = 460 mhz, v ds = 7.5 v ? 25 30 dbm electrical characteristics (t a = 25 c, unless otherwise specified) parameter symbol test conditions min. typ. max. unit dc characteristics gate to source leakage current i gss v gs = 6.0 v ? ? 100 na drain to source leakage current (zero gate voltage drain current) i dss v ds = 25 v ? ? 10 a gate threshold voltage v th v ds = 7.5 v, i ds = 1.0 ma 1.15 1.65 2.25 v drain to source breakdown voltage bv dss i ds = 10 a 25 37 ? v transconductance g m v ds = 7.5 v, i ds = 700 100 ma 1.8 2.2 2.9 s thermal resistance r th channel to case ? 5.0 ? c/w rf characteristics output power p out f = 460 mhz, v ds = 7.5 v, 38.5 39.5 ? dbm drain current i ds p in = 25 dbm, ? 1.70 ? a power drain efficiency d i dset = 200 ma (rf off) ? 68 ? % power added efficiency add ? 66 ? % linear gain g l note 1 ? 22.0 ? db output power p out f = 157 mhz, v ds = 7.5 v, ? 39.6 ? dbm drain current i ds p in = 23 dbm, ? 1.60 ? a power drain efficiency d i dset = 200 ma (rf off) ? 75 ? % power added efficiency add ? 73 ? % linear gain g l note 2 ? 25.0 ? db output power p out f = 900 mhz, v ds = 7.5 v, ? 38.6 ? dbm drain current i ds p in = 27 dbm, ? 1.76 ? a power drain efficiency d i dset = 200 ma (rf off) ? 55 ? % power added efficiency add ? 52 ? % linear gain g l note 1 ? 16.0 ? db note 1 : p in = 10 dbm note 2 : p in = 5 dbm remark dc performance is 100% testing. rf performanc e is testing several samples per wafer. wafer rejection criteria for standard dev ices is 1 reject for several samples. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550979a r09ds0031ej0300 rev.3.00 page 3 of 11 mar 12, 2013 test circuit schematic for 460 mhz c20 c10 in out c22 c11 c12 c21 c1 v ds c1 l1 r1 v gs fet ne5550979a (ws) 50 50 components of test circuit for measuring electrical characteristics symbol value type maker c1 1 f grm31cr72a105ka01b murata c10 100 pf grm1882c1h101ja01 murata c11 24 pf atc100a240jw american technical ceramics c12 2.4 pf atc100a2r4bw american technical ceramics c20 27 pf atc100a270jw american technical ceramics c21 1.8 pf atc100a1r8bw american technical ceramics c22 100 pf atc100a101jw american technical ceramics r1 4.7 k 1/10 w chip resistor ssm ssm_rg1608pb472 l1 123 nh 0.5 mm, d = 3 mm, 10 turns ohesangyou pcb ? r1766, t = 0.4 mm, r = 4.5, size = 30 48 mm panasonic sma connecter ? waka 01k0790-20 waka component layout of t est circuit for 460 mhz c11 c10 c12 c1 r1 l1 c1 c20 c21 c22 v gs gnd v ds c11 c10 c12 c1 r1 l1 c1 c20 c21 c22 v gs gnd v ds a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550979a r09ds0031ej0300 rev.3.00 page 4 of 11 mar 12, 2013 typical characteristics 1 (t a = 25 c) r: f = 460mhz, v ds = 3.6/4.5/6/7.5/8.4/9 v, i dset = 200 ma, p in = 0 to 32 dbm im: f1 = 460mhz, f2 = 461 mhz, v ds = 3.6/4.5/6/7.5/8.4/9 v, i dset = 200ma, p out (2 tone) = 12 to 38 dbm add - 3.6 v add - 6.0 v add - 4.5 v add - 9 v add - 7.5 v 3rd/5th order intermodulation distortion im 3 /im 5 (dbc) 2 tones output power p out (2 tone) (dbm) im 3 /im 5 vs. 2 tones output power 2nd harmonics 2f 0 (dbc) 3rd harmonics 3f 0 (dbc) output power p out (dbm) 2f 0 , 3f 0 vs. output power p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9 v i ds - 3.6 v i ds - 6.0 v i ds - 4.5 v i ds - 9 v i ds - 7.5 v output power p out (dbm) drain current i ds (a) input power p in (dbm) output power, drain current vs. input power 0 0.0 50 5.0 45 4.5 40 4.0 35 3.5 30 3.0 25 2.5 20 2.0 15 1.5 10 1.0 5 0.5 3530 201510 ?5 05 25 power gain g p (db) power added efficiency add (%) remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550979a r09ds0031ej0300 rev.3.00 page 5 of 11 mar 12, 2013 test circuit schematic for 157 mhz c10 in out c24 c11 c12 c21 c22 c23 c20 c1 v ds c1 l1 l11 l20 r1 v gs fet ne5550979a 50 50 components of test circuit for measuring electrical characteristics symbol value type maker c1 1 f grm31cr72a105ka01b murata c10 100 pf grm1882c1h101ja01 murata c11 4.7 pf atc100a4r7ct american technical ceramics c12 39 pf atc100a390jt american technical ceramics c20 2.0 pf atc100a2r0ct american technical ceramics c21 22 pf atc100a220jt american technical ceramics c22 68 pf atc100a680jt american technical ceramics c23 12 pf atc100a120jt american technical ceramics c24 100 pf atc100a101jt american technical ceramics r1 4.7 k 1/10 w chip resistor ssm ssm_rg1608pb472 l1 123 nh 0.5 mm, d = 3 mm, 10 turns ohesangyou l11 27 nh llq2012-f27n toko l20 35 nh 0.5 mm, d = 2.4 mm, 5 turns ohesangyou pcb ? r1766, t = 0.4 mm, r = 4.5, size = 30 48 mm panasonic sma connecter ? waka 01k0790-20 waka a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550979a r09ds0031ej0300 rev.3.00 page 6 of 11 mar 12, 2013 component layout of t est circuit for 157 mhz typical characteristics 2 (t a = 25 c) r: f = 157 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 200 ma, p in = 0 to 27 dbm add - 3.6 v add - 6 v add - 4.5 v add - 9 v add - 7.5 v p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9 v output power p out (dbm) drain current i ds (a) input power p in (dbm) output power, drain current vs. input power 0 0.0 45 4.5 40 4.0 35 3.5 30 3.0 25 2.5 20 2.0 15 1.5 10 1.0 5 0.5 30 201510 ?5 05 25 power gain g p (db) power added efficiency add (%) c23 c11 c10 c12 c1 r1 l1 c1 c20 c22 l11 c21 l20 c24 v gs v ds gnd a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550979a r09ds0031ej0300 rev.3.00 page 7 of 11 mar 12, 2013 test circuit schematic for 900 mhz c10 in out c23 c11 c21 c22 c20 c1 v ds c1 l1 r1 v gs fet ne5550979a 50 50 components of test circuit for measuring electrical characteristics symbol value type maker c1 1 f grm31cr72a105ka01b murata c10 100 pf grm1882c1h101ja01 murata c11 15 pf atc100a150jw american technical ceramics c20 3.3 pf atc100a3r3bw american technical ceramics c21 3.3 pf atc100a3r3bw american technical ceramics c22 12 pf atc100a120jt american technical ceramics c23 100 pf atc100a101jt american technical ceramics r1 4.7 k 1/10 w chip resistor ssm ssm_rg1608pb472 l1 123 nh 0.5 mm, d = 3 mm, 10 turns ohesangyou pcb ? r1766, t = 0.4 mm, r = 4.5, size = 30 48 mm panasonic sma connecter ? waka 01k0790-20 waka a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550979a r09ds0031ej0300 rev.3.00 page 8 of 11 mar 12, 2013 component layout of t est circuit for 900 mhz typical characteristics 3 (t a = 25 c) rf: f = 900 mhz v ds = 3.6/4.5/6/7.5/9 v, i dset = 200 ma, p in = 0 to 32 dbm add - 6.0 v add - 4.5 v add - 7.5 v add - 9 v add - 3.6 v p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9 v i ds - 3.6 v i ds - 6.0 v i ds - 4.5 v i ds - 9 v i ds - 7.5 v output power p out (dbm) drain current i ds (a) input power p in (dbm) output power, drain current vs. input power 0 0.0 50 5.0 45 4.5 40 4.0 35 3.5 30 3.0 25 2.5 20 2.0 15 1.5 10 1.0 5 0.5 3530 201510 ?5 05 25 power gain g p (db) power added efficiency add (%) remark the graphs indicate nominal characteristics. c11 c10 c1 r1 l1 c1 c20 c22 v gs v ds c21 c23 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550979a r09ds0031ej0300 rev.3.00 page 9 of 11 mar 12, 2013 s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/ a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550979a r09ds0031ej0300 rev.3.00 page 10 of 11 mar 12, 2013 package dimensions 79a (unit: mm) 0.90.2 0.20.1 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain (bottom view) 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. source gate drain w 6 21001 79a package recommended p.c.b. layout (unit: mm) 1.7 4.0 0.5 1.0 5.9 1.2 gate source drain 0.5 6.1 0.5 through hole: 0.2 33 stop up the hole with a rosin o r something to avoid solder flow . a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne5550979a r09ds0031ej0300 rev.3.00 page 11 of 11 mar 12, 2013 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (pack age surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ws260 partial heating peak temperature (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below hs350 caution do not use different soldering methods together (except for partial heating). a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ne5550979a data sheet description rev. date page summary 1.00 nov 25, 2011 ? first edition issued 2.00 jul 04, 2012 p.1 modificati on of ordering information p.5 addition of test circuit schematic for 157 mhz p.6 addition of component la yout of test circuit for 157 mhz p.7 addition of test circuit schematic for 900 mhz p.8 addition of component la yout of test circuit for 900 mhz p.9 modification of s-parameters 3.00 mar 12, 2013 p3 modification of components of test circuit for measuring electrical characteristics p5 modification of test circuit schematic for 157 mhz modification of components of test circuit for measuring electrical characteristics p7 modification of components of test circuit for measuring electrical characteristics

▲Up To Search▲

Price & Availability of NE5550979A-T1A-A

	To Download NE5550979A-T1A-A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .